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Literature DB >> 22772206

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

Hao Xu¹, Xi Xiao, Xianyao Li, Yingtao Hu, Zhiyong Li, Tao Chu, Yude Yu, Jinzhong Yu.

Abstract

A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions. This doping profile enabled both high modulation efficiency of V(π)L(π) = 1.5~2.0 V·cm and low doping-induced loss of ~10 dB/cm by applying a relatively low doping concentration of 2 × 10(17) cm(-3). High speed operation up to 40 Gbit/s with 7.01 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 μm.

Year: 2012 PMID： 22772206 DOI： 10.1364/OE.20.015093

Source DB: PubMed Journal: Opt Express ISSN： 1094-4087 Impact factor: 3.894

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Cited

3 in total

1. Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects.

Authors: Gyungock Kim; Hyundai Park; Jiho Joo; Ki-Seok Jang; Myung-Joon Kwack; Sanghoon Kim; In Gyoo Kim; Jin Hyuk Oh; Sun Ae Kim; Jaegyu Park; Sanggi Kim
Journal: Sci Rep Date: 2015-06-10 Impact factor: 4.379

2. Ultrafast, Broadband Photodetector Based on MoSe₂/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode.

Authors: Jie Mao; Yongqiang Yu; Liu Wang; Xiujuan Zhang; Yuming Wang; Zhibin Shao; Jiansheng Jie
Journal: Adv Sci (Weinh) Date: 2016-07-05 Impact factor: 16.806

3. Integrated Optical Modulator Based on Transition between Photonic Bands.

Authors: Alperen Govdeli; Murat Can Sarihan; Utku Karaca; Serdar Kocaman
Journal: Sci Rep Date: 2018-01-26 Impact factor: 4.379

3 in total

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

1. Single-chip photonic transceiver based on bulk-silicon, as a chip-level photonic I/O platform for optical interconnects.

2. Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode.

3. Integrated Optical Modulator Based on Transition between Photonic Bands.

2. Ultrafast, Broadband Photodetector Based on MoSe₂/Silicon Heterojunction with Vertically Standing Layered Structure Using Graphene as Transparent Electrode.