| Literature DB >> 22722295 |
Mohammad Sabaeian1, Ali Khaledi-Nasab.
Abstract
In this work, the effects of size and wetting layer (WL) on subband electronic envelop functions, eigenenergies, linear and nonlinear absorption coefficients, and refractive indices of a dome-shaped InAs/GaAs quantum dot (QD) were investigated. In our model, a dome of InAs QD with its WL embedded in a GaAs matrix was considered. A finite height barrier potential at the InAs/GaAs interface was assumed. To calculate envelope functions and eigenenergies, the effective one-electronic-band Hamiltonian and electron effective mass approximation were used. The linear and nonlinear optical properties were calculated by the density matrix formalism.Entities:
Year: 2012 PMID: 22722295 DOI: 10.1364/AO.51.004176
Source DB: PubMed Journal: Appl Opt ISSN: 1559-128X Impact factor: 1.980