| Literature DB >> 22718359 |
Yuan Zhang1, Peter Zalar, Chunki Kim, Samuel Collins, Guillermo C Bazan, Thuc-Quyen Nguyen.
Abstract
By inserting DNA interlayers beneath the Au contact, the contact resistance of PC(70) BM field-effect transistorss is reduced by approximately 30 times at a gate bias of 20 V. The electron and hole mobilities of ambipolar diketopyrrolopyrrole transistors are increased by one order of magnitude with a reduction of the threshold voltage from 12 to 6.5 V.Entities:
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Year: 2012 PMID: 22718359 DOI: 10.1002/adma.201201248
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849