Literature DB >> 22680885

Ordering mechanisms in epitaxial SiGe nanoislands.

G Vantarakis1, I N Remediakis, P C Kelires.   

Abstract

We investigate and elucidate the surprising observation of atomically ordered domains in dome-shaped SiGe nanoislands. We show, through atomistic Monte Carlo simulations, that this ordering is a surface-related phenomenon, and that is driven by surface equilibrium rather than by surface kinetics. The ordering depends on facet orientation. The main source of ordering is the {15 3 23} facet, while the {105} and {113} facets contribute less. Subsurface ordered configurations self-organize under this facet and are frozen-in and buried during island growth, giving rise to the ordered domains. Ordering mechanisms based on constrained surface kinetics, requiring step-mediated segregation at the island facets, are shown to be much less likely.

Year:  2012        PMID: 22680885     DOI: 10.1103/PhysRevLett.108.176102

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Si/Ge intermixing during Ge Stranski-Krastanov growth.

Authors:  Alain Portavoce; Khalid Hoummada; Antoine Ronda; Dominique Mangelinck; Isabelle Berbezier
Journal:  Beilstein J Nanotechnol       Date:  2014-12-09       Impact factor: 3.649

  1 in total

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