Literature DB >> 22678882

Resistive switching and magnetic modulation in cobalt-doped ZnO.

Guang Chen1, Cheng Song, Chao Chen, Shuang Gao, Fei Zeng, Feng Pan.   

Abstract

A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism (spin) and electrical properties (charge) into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy-based conductive filaments. This is promising for broadening the applications of random access memories to encode quaternary information.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Year:  2012        PMID： 22678882     DOI： 10.1002/adma.201201595

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  16 in total

1.  Resistivity dependence of magnetoresistance in Co/ZnO films.

Authors:  Zhi-Yong Quan; Li Zhang; Wei Liu; Hao Zeng; Xiao-Hong Xu
Journal:  Nanoscale Res Lett       Date:  2014-01-06       Impact factor: 4.703

2.  Tuning the entanglement between orbital reconstruction and charge transfer at a film surface.

Authors:  B Cui; C Song; F Li; G Y Wang; H J Mao; J J Peng; F Zeng; F Pan
Journal:  Sci Rep       Date:  2014-02-26       Impact factor: 4.379

3.  Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.

Authors:  Hangbing Lv; Xiaoxin Xu; Hongtao Liu; Ruoyu Liu; Qi Liu; Writam Banerjee; Haitao Sun; Shibing Long; Ling Li; Ming Liu
Journal:  Sci Rep       Date:  2015-01-14       Impact factor: 4.379

4.  The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template.

Authors:  Changjun Jiang; Lei Wu; WenWen Wei; Chunhui Dong; Jinli Yao
Journal:  Nanoscale Res Lett       Date:  2014-10-21       Impact factor: 4.703

5.  Strain-induced extrinsic high-temperature ferromagnetism in the Fe-doped hexagonal barium titanate.

Authors:  A Zorko; M Pregelj; M Gomilšek; Z Jagličić; D Pajić; M Telling; I Arčon; I Mikulska; M Valant
Journal:  Sci Rep       Date:  2015-01-09       Impact factor: 4.379

6.  Realization of resistive switching and magnetoresistance in ZnO/ZnO-Co composite materials.

Authors:  Xiaoli Li; Juan Jia; Yanchun Li; Yuhao Bai; Jie Li; Yana Shi; Lanfang Wang; Xiaohong Xu
Journal:  Sci Rep       Date:  2016-09-02       Impact factor: 4.379

7.  Remote control of resistive switching in TiO2 based resistive random access memory device.

Authors:  Dwipak Prasad Sahu; S Narayana Jammalamadaka
Journal:  Sci Rep       Date:  2017-12-08       Impact factor: 4.379

8.  Conductance Quantization in Resistive Random Access Memory.

Authors:  Yang Li; Shibing Long; Yang Liu; Chen Hu; Jiao Teng; Qi Liu; Hangbing Lv; Jordi Suñé; Ming Liu
Journal:  Nanoscale Res Lett       Date:  2015-10-26       Impact factor: 4.703

Review 9.  Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

Authors:  Firman Mangasa Simanjuntak; Debashis Panda; Kung-Hwa Wei; Tseung-Yuen Tseng
Journal:  Nanoscale Res Lett       Date:  2016-08-19       Impact factor: 4.703

10.  Formation of ferromagnetic Co-H-Co complex and spin-polarized conduction band in Co-doped ZnO.

Authors:  Seunghun Lee; Ji Hun Park; Bum-Su Kim; Deok-Yong Cho; Yong Nam Choi; Tae-Woo Lee; Won-Kyung Kim; Doukyun Kim; Chae Ryong Cho; Chikako Moriyoshi; Chul Hong Park; Yoshihiro Kuroiwa; Se-Young Jeong
Journal:  Sci Rep       Date:  2017-09-11       Impact factor: 4.379
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