| Literature DB >> 22678832 |
Dattatray J Late1, Bin Liu, Jiajun Luo, Aiming Yan, H S S Ramakrishna Matte, Matthew Grayson, C N R Rao, Vinayak P Dravid.
Abstract
Room-temperature, bottom-gate, field-effect transistor characteristics of 2D ultrathin layer GaS and GaSe prepared from the bulk crystals using a micromechanical cleavage technique are reported. The transistors based on active GaS and GaSe ultrathin layers demonstrate typical n-and p-type conductance transistor operation along with a good ON/OFF ratio and electron differential mobility.Mesh：
Substances：
Year: 2012 PMID： 22678832 DOI： 10.1002/adma.201201361
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849