Literature DB >> 22678725

Extremely narrow violet photoluminescence line from ultrathin InN single quantum well on step-free GaN surface.

Tetsuya Akasaka1, Hideki Gotoh, Yasuyuki Kobayashi, Hideki Yamamoto.   

Abstract

An ultrathin (one monolayer thick) InN single quantum well (SQW) formed on a step-free GaN surface shows very sharp violet PL emission. The size (16 μm in diameter) is large enough for state-of-the-art nanotechnology to handle. Longer wavelength emissions, such as green and red, are expected by increasing the thickness of the SQW through the utilization of the quantum size effect.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Year:  2012        PMID: 22678725     DOI: 10.1002/adma.201200871

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  2 in total

1.  Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy.

Authors:  Dingyu Ma; Xin Rong; Xiantong Zheng; Weiying Wang; Ping Wang; Tobias Schulz; Martin Albrecht; Sebastian Metzner; Mathias Müller; Olga August; Frank Bertram; Jürgen Christen; Peng Jin; Mo Li; Jian Zhang; Xuelin Yang; Fujun Xu; Zhixin Qin; Weikun Ge; Bo Shen; Xinqiang Wang
Journal:  Sci Rep       Date:  2017-04-18       Impact factor: 4.379

2.  Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate.

Authors:  Peng Wu; Jianping Liu; Lingrong Jiang; Lei Hu; Xiaoyu Ren; Aiqin Tian; Wei Zhou; Masao Ikeda; Hui Yang
Journal:  Nanomaterials (Basel)       Date:  2022-01-29       Impact factor: 5.076

  2 in total

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