| Literature DB >> 22673915 |
D Chiba1, M Kawaguchi, S Fukami, N Ishiwata, K Shimamura, K Kobayashi, T Ono.
Abstract
Controlling the displacement of a magnetic domain wall is potentially useful for information processing in magnetic non-volatile memories and logic devices. A magnetic domain wall can be moved by applying an external magnetic field and/or electric current, and its velocity depends on their magnitudes. Here we show that the applying an electric field can change the velocity of a magnetic domain wall significantly. A field-effect device, consisting of a top-gate electrode, a dielectric insulator layer, and a wire-shaped ferromagnetic Co/Pt thin layer with perpendicular anisotropy, was used to observe it in a finite magnetic field. We found that the application of the electric fields in the range of ± 2-3 MV cm(-1) can change the magnetic domain wall velocity in its creep regime (10(6)-10(3) m s(-1)) by more than an order of magnitude. This significant change is due to electrical modulation of the energy barrier for the magnetic domain wall motion.Entities:
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Year: 2012 PMID: 22673915 DOI: 10.1038/ncomms1888
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919