| Literature DB >> 22666077 |
Haiyan Zhang1, Dongming Fang, Pengfei Yang, Chunrong Peng, Xiaolong Wen, Shanhong Xia.
Abstract
The steady-state zero output of static electric field measuring systems often fluctuates, which is caused mainly by the finite leakage resistance of the water film on the surface of the electric field microsensor package. The water adsorption has been calculated using the Boltzmann distribution equation at various relative humidities for borosilicate glass and polytetrafluoroethylene surfaces. At various humidities, water film thickness has been calculated, and the induced charge leakage and field attenuation have been theoretically investigated. Experiments have been performed with microsensors to verify the theoretical predictions and the results are in good agreement.Entities:
Keywords: MEMS; charge leakage; electric field attenuation; electric field sensor; water film thickness
Year: 2012 PMID: 22666077 PMCID: PMC3355460 DOI: 10.3390/s120405105
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1.Photograph of an EFMS package with PTFE cap.
Parameters used in the calculation.
| Parameter | Explanation | Value |
|---|---|---|
| Density of water | 1 × 103 kg/m3 | |
| Mass of water molecule | 2.99 × 10−26 kg | |
| Boltzmann constant | 1.38 × 10−23 J/K | |
| Room temperature, 25 °C | 298 K | |
| Resistivity of water | 3.2 × 104 Ωm | |
| Inner readius of BSG ring | 1 mm | |
| Outer readius of BSG ring | 2 mm | |
| Gain of preprocessing circuit | 80 | |
| DC component of driving signal | 8 V | |
| Conductivity of water | 0.31 × 10−4 S/m | |
| Dielectric constant | 78.36 F/m |
Figure 2.(a) Calculated water film thickness on BSG; (b) Calculated water film thickness on PTFE.
Figure 3.Sketch of electric field attenuation.
Figure 4.Sensor zero drift caused by charge leakage through water film in the surface of BSG.
Figure 5.Sensor output caused by field attenuation before package surface processing.
Figure 6.Sensor output caused by field attenuation after package surface processing.