Literature DB >> 22632449

Carbon nanotube quantum dots as highly sensitive terahertz-cooled spectrometers.

M Rinzan1, G Jenkins, H D Drew, S Shafranjuk, P Barbara.   

Abstract

Terahertz technology has recently emerged as a highly sought-after and versatile scientific tool in many fields, including medical imaging, security screening, and wireless communication. However, scientific progress has been hindered by the lack of sources and detectors in this frequency range, thereby known as the terahertz gap. Here, we show that carbon nanotube quantum dots coupled to antennas are extremely sensitive, broad-band, terahertz quantum detectors with spectral resolution. Their response is due to photon-assisted single-electron tunneling and it is substantially enhanced by a novel radiation-induced nonequilibrium cooling of the electrons, causing a sharp height increase of the Coulomb oscillation peaks.

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Year:  2012        PMID: 22632449     DOI: 10.1021/nl300975h

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  5 in total

1.  Epitaxial graphene quantum dots for high-performance terahertz bolometers.

Authors:  Abdel El Fatimy; Rachael L Myers-Ward; Anthony K Boyd; Kevin M Daniels; D Kurt Gaskill; Paola Barbara
Journal:  Nat Nanotechnol       Date:  2016-01-04       Impact factor: 39.213

2.  Terahertz detection with an antenna-coupled highly-doped silicon quantum dot.

Authors:  Takuya Okamoto; Naoki Fujimura; Luca Crespi; Tetsuo Kodera; Yukio Kawano
Journal:  Sci Rep       Date:  2019-12-09       Impact factor: 4.379

3.  Tunnel field-effect transistors for sensitive terahertz detection.

Authors:  I Gayduchenko; S G Xu; G Alymov; M Moskotin; I Tretyakov; T Taniguchi; K Watanabe; G Goltsman; A K Geim; G Fedorov; D Svintsov; D A Bandurin
Journal:  Nat Commun       Date:  2021-01-22       Impact factor: 14.919

4.  Giant electron-hole transport asymmetry in ultra-short quantum transistors.

Authors:  A C McRae; V Tayari; J M Porter; A R Champagne
Journal:  Nat Commun       Date:  2017-05-31       Impact factor: 14.919

5.  Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared.

Authors:  Mahdi Asgari; Leonardo Viti; Valentina Zannier; Lucia Sorba; Miriam Serena Vitiello
Journal:  Nanomaterials (Basel)       Date:  2021-12-13       Impact factor: 5.076

  5 in total

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