| Literature DB >> 22607154 |
Chih-Yen Chen1, Guang Zhu, Youfan Hu, Jeng-Wei Yu, Jinghui Song, Kai-Yuan Cheng, Lung-Han Peng, Li-Jen Chou, Zhong Lin Wang.
Abstract
Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m(2). Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.Entities:
Mesh:
Substances:
Year: 2012 PMID: 22607154 DOI: 10.1021/nn301814w
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881