Literature DB >> 22607154

Gallium nitride nanowire based nanogenerators and light-emitting diodes.

Chih-Yen Chen1, Guang Zhu, Youfan Hu, Jeng-Wei Yu, Jinghui Song, Kai-Yuan Cheng, Lung-Han Peng, Li-Jen Chou, Zhong Lin Wang.   

Abstract

Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by conductive AFM, and the results showed an output power density of nearly 12.5 mW/m(2). Luminous LED modules based on n-GaN nanowires/p-GaN substrate have been fabricated. CCD images of the lighted LED and the corresponding electroluminescence spectra are recorded at a forward bias. Moreover, the GaN nanowire LED can be lighted up by the power provided by a ZnO nanowire based nanogenerator, demonstrating a self-powered LED using wurtzite-structured nanomaterials.

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Year:  2012        PMID: 22607154     DOI: 10.1021/nn301814w

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  17 in total

1.  Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.

Authors:  Liliia Dvoretckaia; Vladislav Gridchin; Alexey Mozharov; Alina Maksimova; Anna Dragunova; Ivan Melnichenko; Dmitry Mitin; Alexandr Vinogradov; Ivan Mukhin; Georgy Cirlin
Journal:  Nanomaterials (Basel)       Date:  2022-06-10       Impact factor: 5.719

2.  Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities.

Authors:  Alexander Woolf; Tim Puchtler; Igor Aharonovich; Tongtong Zhu; Nan Niu; Danqing Wang; Rachel Oliver; Evelyn L Hu
Journal:  Proc Natl Acad Sci U S A       Date:  2014-09-02       Impact factor: 11.205

3.  Three-dimensional Aerographite-GaN hybrid networks: single step fabrication of porous and mechanically flexible materials for multifunctional applications.

Authors:  Arnim Schuchardt; Tudor Braniste; Yogendra K Mishra; Mao Deng; Matthias Mecklenburg; Marion A Stevens-Kalceff; Simion Raevschi; Karl Schulte; Lorenz Kienle; Rainer Adelung; Ion Tiginyanu
Journal:  Sci Rep       Date:  2015-03-06       Impact factor: 4.379

4.  Ultraviolet photoconductive devices with an n-GaN nanorod-graphene hybrid structure synthesized by metal-organic chemical vapor deposition.

Authors:  San Kang; Arjun Mandal; Jae Hwan Chu; Ji-Hyeon Park; Soon-Yong Kwon; Cheul-Ro Lee
Journal:  Sci Rep       Date:  2015-06-01       Impact factor: 4.379

5.  Energy scavenging based on a single-crystal PMN-PT nanobelt.

Authors:  Fan Wu; Wei Cai; Yao-Wen Yeh; Shiyou Xu; Nan Yao
Journal:  Sci Rep       Date:  2016-03-01       Impact factor: 4.379

6.  Hydrogen Generation using non-polar coaxial InGaN/GaN Multiple Quantum Well Structure Formed on Hollow n-GaN Nanowires.

Authors:  Ji-Hyeon Park; Arjun Mandal; San Kang; Uddipta Chatterjee; Jin Soo Kim; Byung-Guon Park; Moon-Deock Kim; Kwang-Un Jeong; Cheul-Ro Lee
Journal:  Sci Rep       Date:  2016-08-24       Impact factor: 4.379

7.  Direct Writing of Patterned, Lead-Free Nanowire Aligned Flexible Piezoelectric Device.

Authors:  Meng Gao; Lihong Li; Wenbo Li; Haihua Zhou; Yanlin Song
Journal:  Adv Sci (Weinh)       Date:  2016-05-30       Impact factor: 16.806

8.  Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy.

Authors:  Alexey D Bolshakov; Alexey M Mozharov; Georgiy A Sapunov; Igor V Shtrom; Nickolay V Sibirev; Vladimir V Fedorov; Evgeniy V Ubyivovk; Maria Tchernycheva; George E Cirlin; Ivan S Mukhin
Journal:  Beilstein J Nanotechnol       Date:  2018-01-15       Impact factor: 3.649

9.  A low cost, green method to synthesize GaN nanowires.

Authors:  Jun-Wei Zhao; Yue-Fei Zhang; Yong-He Li; Chao-hua Su; Xue-Mei Song; Hui Yan; Ru-Zhi Wang
Journal:  Sci Rep       Date:  2015-12-08       Impact factor: 4.379

10.  Correlation between band gap, dielectric constant, Young's modulus and melting temperature of GaN nanocrystals and their size and shape dependences.

Authors:  Haiming Lu; Xiangkang Meng
Journal:  Sci Rep       Date:  2015-11-19       Impact factor: 4.379

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