Literature DB >> 22577877

Modulation of the electrical properties of VO₂ nanobeams using an ionic liquid as a gating medium.

Heng Ji1, Jiang Wei, Douglas Natelson.   

Abstract

Vanadium dioxide (VO(2)) is a strongly correlated transition metal oxide with a dramatic metal-insulator transition at 67 °C. Researchers have long been interested in manipulating this transition via the field effect. Here we report attempts to modulate this transition in single-crystal VO(2) nanowires via electrochemical gating using ionic liquids. Stray water contamination in the ionic liquid leads to large, slow, hysteretic conductance responses to changes in the gate potential, allowing tuning of the activation energy of the conductance in the insulating state. We suggest that these changes are the result of electrochemical doping via hydrogen. In the absence of this chemical effect, gate response is minimal, suggesting that significant field-effect modulation of the metal-insulator transition is not possible, at least along the crystallographic directions relevant in these nanowires.

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Year:  2012        PMID: 22577877     DOI: 10.1021/nl300741h

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  12 in total

1.  In operando evidence of deoxygenation in ionic liquid gating of YBa2Cu3O7-X.

Authors:  Ana M Perez-Muñoz; Pedro Schio; Roberta Poloni; Alejandro Fernandez-Martinez; Alberto Rivera-Calzada; Julio C Cezar; Eduardo Salas-Colera; German R Castro; Joseph Kinney; Carlos Leon; Jacobo Santamaria; Javier Garcia-Barriocanal; Allen M Goldman
Journal:  Proc Natl Acad Sci U S A       Date:  2016-12-27       Impact factor: 11.205

2.  Oxygen Vacancy in WO3 Film-based FET with Ionic Liquid Gating.

Authors:  Hossein Kalhori; Michael Coey; Ismaeil Abdolhosseini Sarsari; Kiril Borisov; Stephen Barry Porter; Gwenael Atcheson; Mehdi Ranjbar; Hadi Salamati; Plamen Stamenov
Journal:  Sci Rep       Date:  2017-09-25       Impact factor: 4.379

3.  Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors.

Authors:  Tingting Wei; Teruo Kanki; Masashi Chikanari; Takafumi Uemura; Tsuyoshi Sekitani; Hidekazu Tanaka
Journal:  Sci Rep       Date:  2017-12-08       Impact factor: 4.379

4.  ON the Nature of Ionic Liquid Gating of La2-xSrxCuO₄.

Authors:  Hasan Atesci; Wouter Gelling; Francesco Coneri; Hans Hilgenkamp; Jan M van Ruitenbeek
Journal:  Int J Mol Sci       Date:  2018-02-13       Impact factor: 5.923

5.  Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires.

Authors:  Tsubasa Sasaki; Hiroki Ueda; Teruo Kanki; Hidekazu Tanaka
Journal:  Sci Rep       Date:  2015-11-20       Impact factor: 4.379

6.  Tuning the metal-insulator crossover and magnetism in SrRuO₃ by ionic gating.

Authors:  Hee Taek Yi; Bin Gao; Wei Xie; Sang-Wook Cheong; Vitaly Podzorov
Journal:  Sci Rep       Date:  2014-10-13       Impact factor: 4.379

7.  Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions.

Authors:  Takashi Ichimura; Kohei Fujiwara; Hidekazu Tanaka
Journal:  Sci Rep       Date:  2014-07-24       Impact factor: 4.379

8.  Positive-bias gate-controlled metal-insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics.

Authors:  Takeaki Yajima; Tomonori Nishimura; Akira Toriumi
Journal:  Nat Commun       Date:  2015-12-14       Impact factor: 14.919

Review 9.  Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors.

Authors:  Eunah Ko; Jaemin Shin; Changhwan Shin
Journal:  Nano Converg       Date:  2018-01-28

10.  A Novel Method for Notable Reducing Phase Transition Temperature of VO2 Films for Smart Energy Efficient Windows.

Authors:  Huan Guan; Dongping Zhang; Yu Yang; Yi Liu; Aihua Zhong; Qicong He; Jiahua Qi; Ping Fan
Journal:  Nanomaterials (Basel)       Date:  2019-12-25       Impact factor: 5.076

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