Literature DB >> 22571637

Efficient charge extraction out of nanoscale Schottky contacts to CdS nanowires.

Thomas Dufaux1, Marko Burghard, Klaus Kern.   

Abstract

Charge recombination dynamics in semiconductor nanostructures is of vital importance for photovoltaic or photodetector device applications. We use local photocurrent measurements to explore spatially separated drift- and diffusion-currents close to the edge of gold contacts on top of cadmium sulfide nanowires. By theoretical modeling of the experimental photocurrent profiles, the electron diffusion length and lifetime in the wires are obtained to 0.8 μm and 1 ns, respectively. In contrast to bulk devices, the nanoscale dimensions of the involved Schottky contacts enable a highly efficient charge carrier extraction from below the electrodes. This finding paves the way for designing nanostructured optoelectronic devices of improved performance.

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Year:  2012        PMID: 22571637     DOI: 10.1021/nl204193y

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  1 in total

1.  Catalyst- and template-free low-temperature in situ growth of n-type CdS nanowire on p-type CdTe film and p-n heterojunction properties.

Authors:  Ligang Ma; Wenchao Liu; Hongling Cai; Fengming Zhang; Xiaoshan Wu
Journal:  Sci Rep       Date:  2016-12-13       Impact factor: 4.379

  1 in total

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