Literature DB >> 22565772

Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 1.3 μm transmission.

Yongbo Tang1, Jonathan D Peters, John E Bowers.   

Abstract

A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.

Entities:  

Year:  2012        PMID: 22565772     DOI: 10.1364/OE.20.011529

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  3 in total

1.  Graphene-based optical modulators.

Authors:  Siyuan Luo; Yanan Wang; Xin Tong; Zhiming Wang
Journal:  Nanoscale Res Lett       Date:  2015-04-25       Impact factor: 4.703

2.  Hybrid Graphene-Silicon Based Polarization-Insensitive Electro-Absorption Modulator with High-Modulation Efficiency and Ultra-Broad Bandwidth.

Authors:  Yin Xu; Feng Li; Zhe Kang; Dongmei Huang; Xianting Zhang; Hwa-Yaw Tam; P K A Wai
Journal:  Nanomaterials (Basel)       Date:  2019-01-27       Impact factor: 5.076

3.  III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template.

Authors:  Yingtao Hu; Di Liang; Kunal Mukherjee; Youli Li; Chong Zhang; Geza Kurczveil; Xue Huang; Raymond G Beausoleil
Journal:  Light Sci Appl       Date:  2019-10-09       Impact factor: 17.782

  3 in total

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