Literature DB >> 22565752

An electrically pumped germanium laser.

Rodolfo E Camacho-Aguilera1, Yan Cai, Neil Patel, Jonathan T Bessette, Marco Romagnoli, Lionel C Kimerling, Jurgen Michel.   

Abstract

Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10<sup>19</sup>cm<sup>-3</sup> is achieved. A Germanium gain spectrum of nearly 200nm is observed.

Entities:  

Year:  2012        PMID： 22565752     DOI： 10.1364/OE.20.011316

Source DB:  PubMed          Journal:  Opt Express        ISSN： 1094-4087            Impact factor:   3.894


  19 in total

Review 1.  High-performance silicon photonics technology for telecommunications applications.

Authors:  Koji Yamada; Tai Tsuchizawa; Hidetaka Nishi; Rai Kou; Tatsurou Hiraki; Kotaro Takeda; Hiroshi Fukuda; Yasuhiko Ishikawa; Kazumi Wada; Tsuyoshi Yamamoto
Journal:  Sci Technol Adv Mater       Date:  2014-04-23       Impact factor: 8.090

2.  Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator.

Authors:  M A Lourenço; M M Milošević; A Gorin; R M Gwilliam; K P Homewood
Journal:  Sci Rep       Date:  2016-11-22       Impact factor: 4.379

3.  Low-threshold optically pumped lasing in highly strained germanium nanowires.

Authors:  Shuyu Bao; Daeik Kim; Chibuzo Onwukaeme; Shashank Gupta; Krishna Saraswat; Kwang Hong Lee; Yeji Kim; Dabin Min; Yongduck Jung; Haodong Qiu; Hong Wang; Eugene A Fitzgerald; Chuan Seng Tan; Donguk Nam
Journal:  Nat Commun       Date:  2017-11-29       Impact factor: 14.919

4.  Free-running Sn precipitates: an efficient phase separation mechanism for metastable Ge1-xSnx epilayers.

Authors:  Heiko Groiss; Martin Glaser; Magdalena Schatzl; Moritz Brehm; Dagmar Gerthsen; Dietmar Roth; Peter Bauer; Friedrich Schäffler
Journal:  Sci Rep       Date:  2017-11-23       Impact factor: 4.379

5.  Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate.

Authors:  Guangyang Lin; Ningli Chen; Lu Zhang; Zhiwei Huang; Wei Huang; Jianyuan Wang; Jianfang Xu; Songyan Chen; Cheng Li
Journal:  Materials (Basel)       Date:  2016-09-27       Impact factor: 3.623

6.  Bottom-up assembly of metallic germanium.

Authors:  Giordano Scappucci; Wolfgang M Klesse; LaReine A Yeoh; Damien J Carter; Oliver Warschkow; Nigel A Marks; David L Jaeger; Giovanni Capellini; Michelle Y Simmons; Alexander R Hamilton
Journal:  Sci Rep       Date:  2015-08-10       Impact factor: 4.379

7.  A self-assembled microbonded germanium/silicon heterojunction photodiode for 25 Gb/s high-speed optical interconnects.

Authors:  Chih-Kuo Tseng; Wei-Ting Chen; Ku-Hung Chen; Han-Din Liu; Yimin Kang; Neil Na; Ming-Chang M Lee
Journal:  Sci Rep       Date:  2013-11-15       Impact factor: 4.379

8.  Lasing in silicon-organic hybrid waveguides.

Authors:  Dietmar Korn; Matthias Lauermann; Sebastian Koeber; Patrick Appel; Luca Alloatti; Robert Palmer; Pieter Dumon; Wolfgang Freude; Juerg Leuthold; Christian Koos
Journal:  Nat Commun       Date:  2016-03-07       Impact factor: 14.919

9.  Lasing from Glassy Ge Quantum Dots in Crystalline Si.

Authors:  Martyna Grydlik; Florian Hackl; Heiko Groiss; Martin Glaser; Alma Halilovic; Thomas Fromherz; Wolfgang Jantsch; Friedrich Schäffler; Moritz Brehm
Journal:  ACS Photonics       Date:  2016-01-26       Impact factor: 7.529

10.  Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform.

Authors:  H S Mączko; R Kudrawiec; M Gladysiewicz
Journal:  Sci Rep       Date:  2016-09-30       Impact factor: 4.379
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