Literature DB >> 22559561

Cryogenic probe station for on-wafer characterization of electrical devices.

Damon Russell1, Kieran Cleary, Rodrigo Reeves.   

Abstract

A probe station, suitable for the electrical characterization of integrated circuits at cryogenic temperatures is presented. The unique design incorporates all moving components inside the cryostat at room temperature, greatly simplifying the design and allowing automated step and repeat testing. The system can characterize wafers up to 100 mm in diameter, at temperatures <20 K. It is capable of highly repeatable measurements at millimeter-wave frequencies, even though it utilizes a Gifford McMahon cryocooler which typically imposes limits due to vibration. Its capabilities are illustrated by noise temperature and S-parameter measurements on low noise amplifiers for radio astronomy, operating at 75-116 GHz.
© 2012 American Institute of Physics

Year:  2012        PMID: 22559561     DOI: 10.1063/1.3700213

Source DB:  PubMed          Journal:  Rev Sci Instrum        ISSN: 0034-6748            Impact factor:   1.523


  2 in total

1.  Fabrication and Characterization of Superconducting Resonators.

Authors:  Giuseppe Cataldo; Emily M Barrentine; Ari D Brown; Samuel H Moseley; Kongpop U-Yen; Edward J Wollack
Journal:  J Vis Exp       Date:  2016-05-21       Impact factor: 1.355

2.  Long Stroke Design of Piezoelectric Walking Actuator for Wafer Probe Station.

Authors:  Cheng Yang; Yin Wang; Wei Fan
Journal:  Micromachines (Basel)       Date:  2022-03-05       Impact factor: 2.891

  2 in total

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