Literature DB >> 22559008

Thermionic emission and tunneling at carbon nanotube-organic semiconductor interface.

Biddut K Sarker1, Saiful I Khondaker.   

Abstract

We study the charge carrier injection mechanism across the carbon nanotube (CNT)-organic semiconductor interface using a densely aligned carbon nanotube array as electrode and pentacene as organic semiconductor. The current density-voltage (J-V) characteristics measured at different temperatures show a transition from a thermal emission mechanism at high temperature (above 200 K) to a tunneling mechanism at low temperature (below 200 K). A barrier height of ∼0.16 eV is calculated from the thermal emission regime, which is much lower compared to the metal/pentacene devices. At low temperatures, the J-V curves exhibit a direct tunneling mechanism at low bias, corresponding to a trapezoidal barrier, while at high bias the mechanism is well described by Fowler-Nordheim tunneling, which corresponds to a triangular barrier. A transition from direct tunneling to Fowler-Nordheim tunneling further signifies a small injection barrier at the CNT/pentacene interface. Our results presented here are the first direct experimental evidence of low charge carrier injection barrier between CNT electrodes and an organic semiconductor and are a significant step forward in realizing the overall goal of using CNT electrodes in organic electronics.

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Year:  2012        PMID: 22559008     DOI: 10.1021/nn300544v

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  7 in total

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Authors:  Liga Jasulaneca; Jelena Kosmaca; Raimonds Meija; Jana Andzane; Donats Erts
Journal:  Beilstein J Nanotechnol       Date:  2018-01-25       Impact factor: 3.649

2.  Simultaneous Improvement of Hole and Electron Injection in Organic Field-effect Transistors by Conjugated Polymer-wrapped Carbon Nanotube Interlayers.

Authors:  Seung-Hoon Lee; Dongyoon Khim; Yong Xu; Juhwan Kim; Won-Tae Park; Dong-Yu Kim; Yong-Young Noh
Journal:  Sci Rep       Date:  2015-05-22       Impact factor: 4.379

3.  Full-surface emission of graphene-based vertical-type organic light-emitting transistors with high on/off contrast ratios and enhanced efficiencies.

Authors:  Byoungchoo Park; Won Seok Lee; Seo Yeong Na; Jun Nyeong Huh; In-Gon Bae
Journal:  Sci Rep       Date:  2019-04-19       Impact factor: 4.379

4.  Enhanced Photoluminescence and Electrical Properties of n-Al-Doped ZnO Nanorods/p-B-Doped Diamond Heterojunction.

Authors:  Yu Yao; Dandan Sang; Liangrui Zou; Dong Zhang; Qingru Wang; Xueting Wang; Liying Wang; Jie Yin; Jianchao Fan; Qinglin Wang
Journal:  Int J Mol Sci       Date:  2022-03-30       Impact factor: 5.923

5.  Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

Authors:  Jae-Keun Kim; Kyungjune Cho; Tae-Young Kim; Jinsu Pak; Jingon Jang; Younggul Song; Youngrok Kim; Barbara Yuri Choi; Seungjun Chung; Woong-Ki Hong; Takhee Lee
Journal:  Sci Rep       Date:  2016-11-10       Impact factor: 4.379

6.  Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials.

Authors:  Jia Liu; Ji-Chang Ren; Tao Shen; Xinyi Liu; Christopher J Butch; Shuang Li; Wei Liu
Journal:  Research (Wash D C)       Date:  2020-11-15

7.  Giant Magnetoresistance in a Chemical Vapor Deposition Graphene Constriction.

Authors:  Luke W Smith; Jack O Batey; Jack A Alexander-Webber; Yu-Chiang Hsieh; Shin-Jr Fung; Tom Albrow-Owen; Harvey E Beere; Oliver J Burton; Stephan Hofmann; David A Ritchie; Michael Kelly; Tse-Ming Chen; Hannah J Joyce; Charles G Smith
Journal:  ACS Nano       Date:  2022-02-03       Impact factor: 18.027

  7 in total

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