Back-to-back Schottky diodes: the generalization of the diode theory in analysis and extraction of electrical parameters of nanodevices.

We report on the analysis of nonlinear current-voltage characteristics exhibited by a set of blocking metal/SnO(2)/metal. Schottky barrier heights in both interfaces were independently extracted and their dependence on the metal work function was analyzed. The disorder-induced interface states effectively pinned the Fermi level at the SnO(2) surface, leading to the observed Schottky barriers. The model is useful for any two-terminal device which cannot be described by a conventional diode configuration.