Literature DB >> 22549908

Ferroelectric nonvolatile nanowire memory circuit using a single ZnO nanowire and copolymer top layer.

Young Tack Lee1, Pyo Jin Jeon, Kwang H Lee, Ryong Ha, Heon-Jin Choi, Seongil Im.   

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Year:  2012        PMID： 22549908     DOI： 10.1002/adma.201201051

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  6 in total

1.  Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism.

Authors:  Ye Zhou; Su-Ting Han; Prashant Sonar; V A L Roy
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

2.  Interior-architectured ZnO nanostructure for enhanced electrical conductivity via stepwise fabrication process.

Authors:  Eugene Chong; Sarah Kim; Jun-Hyuk Choi; Dae-Geun Choi; Joo-Yun Jung; Jun-Ho Jeong; Eung-Sug Lee; Jaewhan Lee; Inkyu Park; Jihye Lee
Journal:  Nanoscale Res Lett       Date:  2014-08-24       Impact factor: 4.703

3.  Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications.

Authors:  Meng Su; Zhenyu Yang; Lei Liao; Xuming Zou; Johnny C Ho; Jingli Wang; Jianlu Wang; Weida Hu; Xiangheng Xiao; Changzhong Jiang; Chuansheng Liu; Tailiang Guo
Journal:  Adv Sci (Weinh)       Date:  2016-04-15       Impact factor: 16.806

4.  Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film.

Authors:  Ting Xu; Lanyi Xiang; Meili Xu; Wenfa Xie; Wei Wang
Journal:  Sci Rep       Date:  2017-08-21       Impact factor: 4.379

5.  Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels.

Authors:  Ngoc Huynh Van; Jae-Hyun Lee; Dongmok Whang; Dae Joon Kang
Journal:  Nanomicro Lett       Date:  2014-10-23

6.  Design and Simulation of Logic-In-Memory Inverter Based on a Silicon Nanowire Feedback Field-Effect Transistor.

Authors:  Eunwoo Baek; Jaemin Son; Kyoungah Cho; Sangsig Kim
Journal:  Micromachines (Basel)       Date:  2022-04-09       Impact factor: 2.891
  6 in total

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