Literature DB >> 22540613

Exchange-coupled donor dimers in nanocrystal quantum dots.

R N Pereira1, A J Almeida, A R Stegner, M S Brandt, H Wiggers.   

Abstract

Doping of semiconductor nanocrystals (NCs) is expected to enable the control of key NC properties, yet its practical exploitation requires an understanding of exchange interactions when multiple dopants are incorporated in a single NC. Here, we experimentally probe the exchange of donor dimers in NCs via a deviation of their triplet-state magnetic resonance from Curie paramagnetism. We show that the exchange coupling of the closely spaced donors can be well described by effective mass theory, which allows the consideration of statistical effects crucial in NC ensembles. While a dimer induces discrete states in a NC, their energy splitting differs by up to 3 orders of magnitude for randomly placed dimers in a NC ensemble, due to an enormous dependence of the exchange energy on the dimer configuration.

Entities:  

Year:  2012        PMID: 22540613     DOI: 10.1103/PhysRevLett.108.126806

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  4 in total

1.  Location and Electronic Nature of Phosphorus in the Si Nanocrystal--SiO2 System.

Authors:  Dirk König; Sebastian Gutsch; Hubert Gnaser; Michael Wahl; Michael Kopnarski; Jörg Göttlicher; Ralph Steininger; Margit Zacharias; Daniel Hiller
Journal:  Sci Rep       Date:  2015-05-22       Impact factor: 4.379

2.  Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size.

Authors:  Daniel Hiller; Julian López-Vidrier; Sebastian Gutsch; Margit Zacharias; Keita Nomoto; Dirk König
Journal:  Sci Rep       Date:  2017-04-13       Impact factor: 4.379

3.  Phosphorus Doping in Si Nanocrystals/SiO2 multilayers and Light Emission with Wavelength compatible for Optical Telecommunication.

Authors:  Peng Lu; Weiwei Mu; Jun Xu; Xiaowei Zhang; Wenping Zhang; Wei Li; Ling Xu; Kunji Chen
Journal:  Sci Rep       Date:  2016-03-09       Impact factor: 4.379

4.  Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO2/Si3N4-coating.

Authors:  Dirk König; Daniel Hiller; Noël Wilck; Birger Berghoff; Merlin Müller; Sangeeta Thakur; Giovanni Di Santo; Luca Petaccia; Joachim Mayer; Sean Smith; Joachim Knoch
Journal:  Beilstein J Nanotechnol       Date:  2018-08-23       Impact factor: 3.649

  4 in total

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