Literature DB >> 22540611

Valley-based noise-resistant quantum computation using Si quantum dots.

Dimitrie Culcer1, A L Saraiva, Belita Koiller, Xuedong Hu, S Das Sarma.   

Abstract

We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tunneling between opposite valley eigenstates, which enables one-qubit rotations. Two-qubit operations rely on a stripline resonator, and readout on charge sensing. Sensitivity to charge and spin fluctuations is determined by intervalley processes and is greatly reduced as compared to conventional spin and charge qubits. We describe a valley echo for further noise suppression.

Entities:  

Year:  2012        PMID: 22540611     DOI: 10.1103/PhysRevLett.108.126804

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  9 in total

1.  Opto-valleytronic imaging of atomically thin semiconductors.

Authors:  Andre Neumann; Jessica Lindlau; Léo Colombier; Manuel Nutz; Sina Najmaei; Jun Lou; Aditya D Mohite; Hisato Yamaguchi; Alexander Högele
Journal:  Nat Nanotechnol       Date:  2017-01-16       Impact factor: 39.213

2.  Spatially resolving valley quantum interference of a donor in silicon.

Authors:  J Salfi; J A Mol; R Rahman; G Klimeck; M Y Simmons; L C L Hollenberg; S Rogge
Journal:  Nat Mater       Date:  2014-04-06       Impact factor: 43.841

3.  Valley polarization assisted spin polarization in two dimensions.

Authors:  V T Renard; B A Piot; X Waintal; G Fleury; D Cooper; Y Niida; D Tregurtha; A Fujiwara; Y Hirayama; K Takashina
Journal:  Nat Commun       Date:  2015-06-01       Impact factor: 14.919

4.  Electric tuning of direct-indirect optical transitions in silicon.

Authors:  J Noborisaka; K Nishiguchi; A Fujiwara
Journal:  Sci Rep       Date:  2014-11-07       Impact factor: 4.379

5.  Coherent manipulation of valley states at multiple charge configurations of a silicon quantum dot device.

Authors:  Joshua S Schoenfield; Blake M Freeman; HongWen Jiang
Journal:  Nat Commun       Date:  2017-07-05       Impact factor: 14.919

6.  Detection of thermodynamic "valley noise" in monolayer semiconductors: Access to intrinsic valley relaxation time scales.

Authors:  M Goryca; N P Wilson; P Dey; X Xu; S A Crooker
Journal:  Sci Adv       Date:  2019-03-01       Impact factor: 14.136

7.  Metallic behaviour in SOI quantum wells with strong intervalley scattering.

Authors:  V T Renard; I Duchemin; Y Niida; A Fujiwara; Y Hirayama; K Takashina
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

8.  Classification of Valleytronics in Thermoelectricity.

Authors:  Payam Norouzzadeh; Daryoosh Vashaee
Journal:  Sci Rep       Date:  2016-03-14       Impact factor: 4.379

9.  Electron-Hole Crossover in Gate-Controlled Bilayer Graphene Quantum Dots.

Authors:  L Banszerus; A Rothstein; T Fabian; S Möller; E Icking; S Trellenkamp; F Lentz; D Neumaier; K Watanabe; T Taniguchi; F Libisch; C Volk; C Stampfer
Journal:  Nano Lett       Date:  2020-10-05       Impact factor: 11.189

  9 in total

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