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Literature DB >> 22528823

Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating.

Luca Pellegrino¹, Nicola Manca, Teruo Kanki, Hidekazu Tanaka, Michele Biasotti, Emilio Bellingeri, Antonio Sergio Siri, Daniele Marré.

Abstract

Two-terminal multistate memory elements based on VO(2)/TiO(2) thin film microcantilevers are reported. Volatile and non-volatile multiple resistance states are programmed by current pulses at temperatures within the hysteretic region of the metal-insulator transition of VO(2). The memory mechanism is based on current-induced creation of metallic clusters by self-heating of micrometric suspended regions and resistive reading via percolation.

Entities: Chemical

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Year: 2012 PMID： 22528823 DOI： 10.1002/adma.201104669

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

7 in total

1. Enhanced electronic-transport modulation in single-crystalline VO₂ nanowire-based solid-state field-effect transistors.

Authors: Tingting Wei; Teruo Kanki; Masashi Chikanari; Takafumi Uemura; Tsuyoshi Sekitani; Hidekazu Tanaka
Journal: Sci Rep Date: 2017-12-08 Impact factor: 4.379

2. Separation of current density and electric field domains caused by nonlinear electronic instabilities.

Authors: Suhas Kumar; R Stanley Williams
Journal: Nat Commun Date: 2018-05-23 Impact factor: 14.919

3. Field-induced p-n transition in yttria-stabilized zirconia.

Authors: Marc Jovaní; Héctor Beltrán-Mir; Eloísa Cordoncillo; Anthony R West
Journal: Sci Rep Date: 2019-12-06 Impact factor: 4.379

Review 4. Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives.

Authors: Yanqing Zhang; Weiming Xiong; Weijin Chen; Yue Zheng
Journal: Nanomaterials (Basel) Date: 2021-01-28 Impact factor: 5.076

Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating.

1. Enhanced electronic-transport modulation in single-crystalline VO₂ nanowire-based solid-state field-effect transistors.

2. Separation of current density and electric field domains caused by nonlinear electronic instabilities.

3. Field-induced p-n transition in yttria-stabilized zirconia.

Review 4. Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives.

5. Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires.

6. Non-thermal resistive switching in Mott insulator nanowires.

7. Two-Channel VO₂ Memory Meta-Device for Terahertz Waves.

Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating.

1. Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors.

2. Separation of current density and electric field domains caused by nonlinear electronic instabilities.

3. Field-induced p-n transition in yttria-stabilized zirconia.

Review 4. Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives.

5. Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires.

6. Non-thermal resistive switching in Mott insulator nanowires.

7. Two-Channel VO2 Memory Meta-Device for Terahertz Waves.

1. Enhanced electronic-transport modulation in single-crystalline VO₂ nanowire-based solid-state field-effect transistors.

7. Two-Channel VO₂ Memory Meta-Device for Terahertz Waves.