| Literature DB >> 22526246 |
Hyun Jae Song1, Minhyeok Son, Chibeom Park, Hyunseob Lim, Mark P Levendorf, Adam W Tsen, Jiwoong Park, Hee Cheul Choi.
Abstract
Metal catalyst-free growth of large scale single layer graphene film on a sapphire substrate by a chemical vapor deposition (CVD) process at 950 °C is demonstrated. A top-gated graphene field effect transistor (FET) device is successfully fabricated without any transfer process. The detailed growth process is investigated by the atomic force microscopy (AFM) studies.Entities:
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Year: 2012 PMID： 22526246 DOI： 10.1039/c2nr30330b
Source DB: PubMed Journal: Nanoscale ISSN： 2040-3364 Impact factor: 7.790