| Literature DB >> 22525096 |
Eduardo Fernández1, Galina V Kurlyandskaya, Alfredo García-Arribas, Andrey V Svalov.
Abstract
Nanostructured FeNi-based multilayers are very suitable for use as magnetic sensors using the giant magneto-impedance effect. New fields of application can be opened with these materials deposited onto flexible substrates. In this work, we compare the performance of samples prepared onto a rigid glass substrate and onto a cyclo olefin copolymer flexible one. Although a significant reduction of the field sensitivity is found due to the increased effect of the stresses generated during preparation, the results are still satisfactory for use as magnetic field sensors in special applications. Moreover, we take advantage of the flexible nature of the substrate to evaluate the pressure dependence of the giant magneto-impedance effect. Sensitivities up to 1 Ω/Pa are found for pressures in the range of 0 to 1 Pa, demostrating the suitability of these nanostructured materials deposited onto flexible substrates to build sensitive pressure sensors.Entities:
Year: 2012 PMID: 22525096 PMCID: PMC3352033 DOI: 10.1186/1556-276X-7-230
Source DB: PubMed Journal: Nanoscale Res Lett ISSN: 1556-276X Impact factor: 4.703
Figure 1Scheme of the GMI structure and the samples deposited onto a COC substrate. (a) Scheme of the [FeNi(170 nm)/Ti(6 nm)]3/Cu(250 nm)/[Ti(6 nm)/FeNi(170 nm)]3 GMI structure used in this study. (b) Samples deposited onto a COC flexible substrate.
Figure 2M(H) curves. (a) Sample deposited onto the rigid glass substrate and (b) onto the flexible substrate.
Figure 3Frequency dependence field sensitivity. Frequency dependence of the maximum value of (a) the ΔZ/Z ratio and of (b) the field sensitivity.
Figure 4Evolution of the GMI curves when subjected to increasing pressures. Real part of the impedance as a function of the applied magnetic field at 100 MHz and with an applied pressure of (a) 0 Pa, (b) 2 Pa and (c) 4 Pa.
Figure 5Real part of the impedance variation. Real part of the impedance as a function of the applied pressure at (a) H = 0 A/m and (b) H = 480 A/m, measured at 100 MHz.