Literature DB >> 22513606

Compact and low power operation optical switch using silicon-germanium/silicon hetero-structure waveguide.

Shigeaki Sekiguchi1, Teruo Kurahashi, Lei Zhu, Kenichi Kawaguchi, Ken Morito.   

Abstract

We proposed a silicon-based optical switch with a carrier-plasma-induced phase shifter which employs a silicon-germanium (SiGe) / silicon (Si) hetero-structure in the waveguide core. A type-I hetero-interface formed by SiGe and Si is expected to confine carriers effectively in the SiGe waveguide core. The fabricated Mach-Zehnder optical switch shows a low switching power of only 1.53 mW with a compact phase shifter length of 250 μm. The switching time of the optical switch is less than 4.6 ns for the case of a square waveform driving condition, and 1 ns for the case of a pre-emphasis electric driving condition. These results show that our proposed SiGe/Si waveguide structure holds promise for active devices with compact size and low operation power.

Entities:  

Year:  2012        PMID: 22513606     DOI: 10.1364/OE.20.008949

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  2 in total

1.  Research into Two Photonic-Integrated Waveguides Based on SiGe Material.

Authors:  Song Feng; Bin Xue
Journal:  Materials (Basel)       Date:  2020-04-16       Impact factor: 3.623

2.  Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators.

Authors:  Younghyun Kim; Mitsuru Takenaka; Takenori Osada; Masahiko Hata; Shinichi Takagi
Journal:  Sci Rep       Date:  2014-04-15       Impact factor: 4.379

  2 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.