| Literature DB >> 22513606 |
Shigeaki Sekiguchi1, Teruo Kurahashi, Lei Zhu, Kenichi Kawaguchi, Ken Morito.
Abstract
We proposed a silicon-based optical switch with a carrier-plasma-induced phase shifter which employs a silicon-germanium (SiGe) / silicon (Si) hetero-structure in the waveguide core. A type-I hetero-interface formed by SiGe and Si is expected to confine carriers effectively in the SiGe waveguide core. The fabricated Mach-Zehnder optical switch shows a low switching power of only 1.53 mW with a compact phase shifter length of 250 μm. The switching time of the optical switch is less than 4.6 ns for the case of a square waveform driving condition, and 1 ns for the case of a pre-emphasis electric driving condition. These results show that our proposed SiGe/Si waveguide structure holds promise for active devices with compact size and low operation power.Entities:
Year: 2012 PMID: 22513606 DOI: 10.1364/OE.20.008949
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894