Literature DB >> 22499356

Metal oxide thin film phototransistor for remote touch interactive displays.

Seung-Eon Ahn1, Ihun Song, Sanghun Jeon, Youg Woo Jeon, Young Kim, Changjung Kim, Byungki Ryu, Je-Hun Lee, Arokia Nathan, Sungsik Lee, Gyu Tae Kim, U-In Chung.   

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Year:  2012        PMID： 22499356     DOI： 10.1002/adma.201200293

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


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  15 in total

1.  Enhanced performance and stability in InGaZnO NIR phototransistors with alumina-infilled quantum dot solid.

Authors:  Yoon-Seo Kim; Hye-Jin Oh; Seungki Shin; Nuri Oh; Jin-Seong Park
Journal:  Sci Rep       Date:  2022-07-16       Impact factor: 4.996

2.  Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector.

Authors:  Chulseung Jung; Seung Min Kim; Hyunseong Moon; Gyuchull Han; Junyeon Kwon; Young Ki Hong; Inturu Omkaram; Youngki Yoon; Sunkook Kim; Jozeph Park
Journal:  Sci Rep       Date:  2015-10-19       Impact factor: 4.379

3.  Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process.

Authors:  Myeong Gu Yun; Ye Kyun Kim; Cheol Hyoun Ahn; Sung Woon Cho; Won Jun Kang; Hyung Koun Cho; Yong-Hoon Kim
Journal:  Sci Rep       Date:  2016-08-24       Impact factor: 4.379

4.  Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry.

Authors:  Seongin Hong; Nicolò Zagni; Sooho Choo; Na Liu; Seungho Baek; Arindam Bala; Hocheon Yoo; Byung Ha Kang; Hyun Jae Kim; Hyung Joong Yun; Muhammad Ashraful Alam; Sunkook Kim
Journal:  Nat Commun       Date:  2021-06-11       Impact factor: 14.919

5.  Enhancement of Photodetective Properties on Multilayered MoS2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors.

Authors:  Seung Gi Seo; Jae Hyeon Ryu; Seung Yeob Kim; Jinheon Jeong; Sung Hun Jin
Journal:  Nanomaterials (Basel)       Date:  2021-06-17       Impact factor: 5.076

6.  Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.

Authors:  Hyun-Suk Kim; Sang Ho Jeon; Joon Seok Park; Tae Sang Kim; Kyoung Seok Son; Jong-Baek Seon; Seok-Jun Seo; Sun-Jae Kim; Eunha Lee; Jae Gwan Chung; Hyungik Lee; Seungwu Han; Myungkwan Ryu; Sang Yoon Lee; Kinam Kim
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

7.  Nanocrystalline ZnON; high mobility and low band gap semiconductor material for high performance switch transistor and image sensor application.

Authors:  Eunha Lee; Anass Benayad; Taeho Shin; HyungIk Lee; Dong-Su Ko; Tae Sang Kim; Kyoung Seok Son; Myungkwan Ryu; Sanghun Jeon; Gyeong-Su Park
Journal:  Sci Rep       Date:  2014-05-13       Impact factor: 4.379

8.  A study on the electron transport properties of ZnON semiconductors with respect to the relative anion content.

Authors:  Jozeph Park; Yang Soo Kim; Kyung-Chul Ok; Yun Chang Park; Hyun You Kim; Jin-Seong Park; Hyun-Suk Kim
Journal:  Sci Rep       Date:  2016-04-21       Impact factor: 4.379

9.  A Direct Method to Extract Transient Sub-Gap Density of State (DOS) Based on Dual Gate Pulse Spectroscopy.

Authors:  Mingzhi Dai; Karim Khan; Shengnan Zhang; Kemin Jiang; Xingye Zhang; Weiliang Wang; Lingyan Liang; Hongtao Cao; Pengjun Wang; Peng Wang; Lijing Miao; Haiming Qin; Jun Jiang; Lixin Xue; Junhao Chu
Journal:  Sci Rep       Date:  2016-06-14       Impact factor: 4.379

10.  High mobility and high stability glassy metal-oxynitride materials and devices.

Authors:  Eunha Lee; Taeho Kim; Anass Benayad; Jihyun Hur; Gyeong-Su Park; Sanghun Jeon
Journal:  Sci Rep       Date:  2016-04-05       Impact factor: 4.379
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