| Literature DB >> 22488954 |
Mariana Ungureanu1, Raul Zazpe, Federico Golmar, Pablo Stoliar, Roger Llopis, Felix Casanova, Luis E Hueso.
Abstract
Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al(2) O(3) uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al(2) O(3) layer when a suitable voltage pulse is applied. The resistance of the Al(2) O(3) can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.Entities:
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Year: 2012 PMID: 22488954 DOI: 10.1002/adma.201200382
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849