Literature DB >> 22488954

A light-controlled resistive switching memory.

Mariana Ungureanu1, Raul Zazpe, Federico Golmar, Pablo Stoliar, Roger Llopis, Felix Casanova, Luis E Hueso.   

Abstract

Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al(2) O(3) uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al(2) O(3) layer when a suitable voltage pulse is applied. The resistance of the Al(2) O(3) can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Year:  2012        PMID: 22488954     DOI: 10.1002/adma.201200382

Source DB:  PubMed          Journal:  Adv Mater        ISSN: 0935-9648            Impact factor:   30.849


  10 in total

Review 1.  Advances in Emerging Photonic Memristive and Memristive-Like Devices.

Authors:  Wenxiao Wang; Song Gao; Yaqi Wang; Yang Li; Wenjing Yue; Hongsen Niu; Feifei Yin; Yunjian Guo; Guozhen Shen
Journal:  Adv Sci (Weinh)       Date:  2022-08-09       Impact factor: 17.521

2.  LSD1 and HY5 antagonistically regulate red light induced-programmed cell death in Arabidopsis.

Authors:  Tingting Chai; Jun Zhou; Jian Liu; Da Xing
Journal:  Front Plant Sci       Date:  2015-05-05       Impact factor: 5.753

3.  Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory.

Authors:  Hangbing Lv; Xiaoxin Xu; Hongtao Liu; Ruoyu Liu; Qi Liu; Writam Banerjee; Haitao Sun; Shibing Long; Ling Li; Ming Liu
Journal:  Sci Rep       Date:  2015-01-14       Impact factor: 4.379

4.  Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

Authors:  Souvik Kundu; Michael Clavel; Pranab Biswas; Bo Chen; Hyun-Cheol Song; Prashant Kumar; Nripendra N Halder; Mantu K Hudait; Pallab Banerji; Mohan Sanghadasa; Shashank Priya
Journal:  Sci Rep       Date:  2015-07-23       Impact factor: 4.379

5.  A spot laser modulated resistance switching effect observed on n-type Mn-doped ZnO/SiO2/Si structure.

Authors:  Jing Lu; Xinglong Tu; Guilin Yin; Hui Wang; Dannong He
Journal:  Sci Rep       Date:  2017-11-09       Impact factor: 4.379

6.  Hydrothermal Preparation and White-Light-Controlled Resistive Switching Behavior of BaWO4 Nanospheres.

Authors:  Bai Sun; Yonghong Liu; Wenxi Zhao; Jinggao Wu; Peng Chen
Journal:  Nanomicro Lett       Date:  2014-11-22

7.  Concept and modelling of memsensors as two terminal devices with enhanced capabilities in neuromorphic engineering.

Authors:  Alexander Vahl; Jürgen Carstensen; Sören Kaps; Oleg Lupan; Thomas Strunskus; Rainer Adelung; Franz Faupel
Journal:  Sci Rep       Date:  2019-03-13       Impact factor: 4.379

8.  UV induced resistive switching in hybrid polymer metal oxide memristors.

Authors:  Spyros Stathopoulos; Ioulia Tzouvadaki; Themis Prodromakis
Journal:  Sci Rep       Date:  2020-12-03       Impact factor: 4.379

9.  Non-Hebbian learning implementation in light-controlled resistive memory devices.

Authors:  Mariana Ungureanu; Pablo Stoliar; Roger Llopis; Fèlix Casanova; Luis E Hueso
Journal:  PLoS One       Date:  2012-12-14       Impact factor: 3.240

10.  Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis.

Authors:  Adnan Younis; Dewei Chu; Sean Li
Journal:  Sci Rep       Date:  2015-09-01       Impact factor: 4.379

  10 in total

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