| Literature DB >> 22488552 |
Abstract
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to that using a conventional PEDOT:PSS layer without annealing at an elevated temperature.Entities:
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Year: 2012 PMID: 22488552 DOI: 10.1002/adma.201104771
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849