Literature DB >> 22463434

Electron-electron interaction in the magnetoresistance of graphene.

Johannes Jobst1, Daniel Waldmann, Igor V Gornyi, Alexander D Mirlin, Heiko B Weber.   

Abstract

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization, the observed temperature-dependent parabolic magnetoresistivity is a manifestation of the electron-electron interaction. We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field-dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of magnetoresistivity and the theory of electron-electron interaction in the diffusive regime. We can further assign a temperature-driven crossover to the reduction of the multiplet modes contributing to electron-electron interaction from 7 to 3 due to intervalley scattering. In addition, we find a temperature-independent ballistic contribution to the magnetoresistivity in classically strong magnetic fields.

Entities:  

Year:  2012        PMID: 22463434     DOI: 10.1103/PhysRevLett.108.106601

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  6 in total

1.  Functionalized graphene as a model system for the two-dimensional metal-insulator transition.

Authors:  M S Osofsky; S C Hernández; A Nath; V D Wheeler; S G Walton; C M Krowne; D K Gaskill
Journal:  Sci Rep       Date:  2016-02-10       Impact factor: 4.379

2.  Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene.

Authors:  Kil-Joon Min; Jaesung Park; Wan-Seop Kim; Dong-Hun Chae
Journal:  Sci Rep       Date:  2017-09-21       Impact factor: 4.379

3.  Magnetotransport on the nano scale.

Authors:  Philip Willke; Thomas Kotzott; Thomas Pruschke; Martin Wenderoth
Journal:  Nat Commun       Date:  2017-05-04       Impact factor: 14.919

4.  Photon Drag Currents and Terahertz Generation in α-Sn/Ge Quantum Wells.

Authors:  Binglei Zhang; Yi Luo; Yang Liu; Valerii N Trukhin; Ilia A Mustafin; Prokhor A Alekseev; Bogdan R Borodin; Ilya A Eliseev; Fatemah H Alkallas; Amira Ben Gouider Trabelsi; Anna Kusmartseva; Fedor V Kusmartsev
Journal:  Nanomaterials (Basel)       Date:  2022-08-23       Impact factor: 5.719

5.  Determining the nature of the gap in semiconducting graphene.

Authors:  J C Prestigiacomo; A Nath; M S Osofsky; S C Hernández; V D Wheeler; S G Walton; D K Gaskill
Journal:  Sci Rep       Date:  2017-02-09       Impact factor: 4.379

6.  Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence.

Authors:  R Somphonsane; H Ramamoorthy; G He; J Nathawat; S Yin; C-P Kwan; N Arabchigavkani; B Barut; M Zhao; Z Jin; J Fransson; J P Bird
Journal:  Sci Rep       Date:  2020-03-27       Impact factor: 4.379

  6 in total

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