Literature DB >> 22453428

Si/Ge uni-traveling carrier photodetector.

Molly Piels1, John E Bowers.   

Abstract

We have fabricated and characterized a germanium on silicon uni-traveling carrier photodetector for analog and coherent communications applications. The device has a bandwidth of 20GHz, a large-signal 1dB saturation photocurrent of 20mA at -3V, and a low thermal impedance of 520K/W.

Entities:  

Mesh:

Substances:

Year:  2012        PMID: 22453428     DOI: 10.1364/OE.20.007488

Source DB:  PubMed          Journal:  Opt Express        ISSN: 1094-4087            Impact factor:   3.894


  1 in total

1.  High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate.

Authors:  Chong Li; ChunLai Xue; Zhi Liu; Hui Cong; Buwen Cheng; Zonghai Hu; Xia Guo; Wuming Liu
Journal:  Sci Rep       Date:  2016-06-09       Impact factor: 4.379

  1 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.