Literature DB >> 22446239

Ultrawide-bandwidth, superluminescent light-emitting diodes using InAs quantum dots of tuned height.

S Haffouz1, P J Barrios, R Normandin, D Poitras, Z Lu.   

Abstract

An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of dots of tuned height is reported. Due to thermal effect, the superluminescent phenomenon is observed only under pulse-mode operation. The device exhibits a 3 dB bandwidth of 190 nm with central wavelength of 1020 nm under continuous-wave (cw) conditions. The maximum corresponding output power achieved in this device under cw and pulsed operation conditions are 0.54 mW and 17 mW, respectively.

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Year:  2012        PMID: 22446239     DOI: 10.1364/OL.37.001103

Source DB:  PubMed          Journal:  Opt Lett        ISSN: 0146-9592            Impact factor:   3.776


  1 in total

1.  Optical characterization of In-flushed InAs/GaAs quantum dots emitting a broadband spectrum with multiple peaks at ~1 μm.

Authors:  Shigehiro Kitamura; Masaya Senshu; Toshio Katsuyama; Yuji Hino; Nobuhiko Ozaki; Shunsuke Ohkouchi; Yoshimasa Sugimoto; Richard A Hogg
Journal:  Nanoscale Res Lett       Date:  2015-05-27       Impact factor: 4.703

  1 in total

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