Literature DB >> 22434046

Quantum conductance and switching kinetics of AgI-based microcrossbar cells.

S Tappertzhofen1, I Valov, R Waser.   

Abstract

Microcrossbar structured electrochemical metallization (ECM) cells based on silver iodide (AgI) solid electrolyte were fabricated and analyzed in terms of the resistive switching effect. The switching behavior implies the existence of quantized conductance higher than 78 µS which can be identified as a multiple of the single atomic point contact conductivity. The nonlinearity of the switching kinetics has been analyzed in detail. Fast switching in at least 50 ns was observed for short pulse measurements.

Entities:  

Year:  2012        PMID: 22434046     DOI: 10.1088/0957-4484/23/14/145703

Source DB:  PubMed          Journal:  Nanotechnology        ISSN: 0957-4484            Impact factor:   3.874


  11 in total

1.  Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells.

Authors:  Nicolas Onofrio; David Guzman; Alejandro Strachan
Journal:  Nat Mater       Date:  2015-03-02       Impact factor: 43.841

2.  Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.

Authors:  Shibing Long; Luca Perniola; Carlo Cagli; Julien Buckley; Xiaojuan Lian; Enrique Miranda; Feng Pan; Ming Liu; Jordi Suñé
Journal:  Sci Rep       Date:  2013-10-14       Impact factor: 4.379

3.  Physical and chemical mechanisms in oxide-based resistance random access memory.

Authors:  Kuan-Chang Chang; Ting-Chang Chang; Tsung-Ming Tsai; Rui Zhang; Ya-Chi Hung; Yong-En Syu; Yao-Feng Chang; Min-Chen Chen; Tian-Jian Chu; Hsin-Lu Chen; Chih-Hung Pan; Chih-Cheng Shih; Jin-Cheng Zheng; Simon M Sze
Journal:  Nanoscale Res Lett       Date:  2015-03-12       Impact factor: 4.703

4.  Probing the electrical switching of a memristive optical antenna by STEM EELS.

Authors:  David T Schoen; Aaron L Holsteen; Mark L Brongersma
Journal:  Nat Commun       Date:  2016-07-14       Impact factor: 14.919

5.  Emergence of winner-takes-all connectivity paths in random nanowire networks.

Authors:  Hugh G Manning; Fabio Niosi; Claudia Gomes da Rocha; Allen T Bellew; Colin O'Callaghan; Subhajit Biswas; Patrick F Flowers; Benjamin J Wiley; Justin D Holmes; Mauro S Ferreira; John J Boland
Journal:  Nat Commun       Date:  2018-08-13       Impact factor: 14.919

6.  Nanobatteries in redox-based resistive switches require extension of memristor theory.

Authors:  I Valov; E Linn; S Tappertzhofen; S Schmelzer; J van den Hurk; F Lentz; R Waser
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

7.  Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories.

Authors:  Deok-Yong Cho; Stefan Tappertzhofen; Rainer Waser; Ilia Valov
Journal:  Sci Rep       Date:  2013-01-30       Impact factor: 4.379

8.  Quantum conductance in silicon oxide resistive memory devices.

Authors:  A Mehonic; A Vrajitoarea; S Cueff; S Hudziak; H Howe; C Labbé; R Rizk; M Pepper; A J Kenyon
Journal:  Sci Rep       Date:  2013       Impact factor: 4.379

9.  Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors.

Authors:  Wei Yi; Sergey E Savel'ev; Gilberto Medeiros-Ribeiro; Feng Miao; M-X Zhang; J Joshua Yang; Alexander M Bratkovsky; R Stanley Williams
Journal:  Nat Commun       Date:  2016-04-04       Impact factor: 14.919

10.  Conductance Quantization in Resistive Random Access Memory.

Authors:  Yang Li; Shibing Long; Yang Liu; Chen Hu; Jiao Teng; Qi Liu; Hangbing Lv; Jordi Suñé; Ming Liu
Journal:  Nanoscale Res Lett       Date:  2015-10-26       Impact factor: 4.703

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