Heteroepitaxial growth of GaSb nanotrees with an ultra-low reflectivity in a broad spectral range.

We report on the growth of GaSb nanotrees on InAs { ̅1 ̅1 ̅1}(B) substrates by chemical beam epitaxy. GaSb nanotrees form by the nucleation of Ga droplets on the surface of < ̅1 ̅1 ̅1>(B) oriented GaSb nanowires followed by the epitaxial growth of branches catalyzed by these Ga droplets. In the tip region, the trunks of the GaSb nanotrees are periodically twinned, which is attributed to a change of the effective V/III ratio at the later stage of growth as a consequence of the change in surface structure. The reflectivity of a forest of nanotrees was measured for a broad spectral range and compared to the reflectivity of a GaSb ( ̅1 ̅1 ̅1)(B) wafer and of GaSb nanowires. At wavelengths from 500 to 1700 nm, the presence of GaSb nanotrees decreased the reflection by three orders of magnitude compared to a blank GaSb substrate.