| Literature DB >> 22431235 |
Abstract
Devices fabricated by using the inner-crystal piezopotential as a "gate" voltage to tune/control the carrier generation, transport, and recombination processes at the vicinity of a p-n junction are named piezo-phototronics. Here, the theory of the photon emission and carrier transport behavior in piezo-phototronic devices is investigated as a p-n junction light-emitting diode. Numerical calculations are given for predicting the photon emission and current-voltage characteristics of a general piezo-phototronic light-emitting diode.Mesh:
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Year: 2012 PMID: 22431235 DOI: 10.1002/adma.201104263
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849