| Literature DB >> 22418489 |
Arata Nakajima1, Hiroshi Kimura, Yosmongkol Sawadsaringkarn, Yasuyo Maezawa, Takuma Kobayashi, Toshihiko Noda, Kiyotaka Sasagawa, Takashi Tokuda, Yasuyuki Ishikawa, Sadao Shiosaka, Jun Ohta.
Abstract
We developed a complementary metal oxide semiconductor (CMOS) integrated device for optogenetic applications. This device can interface via neuronal tissue with three functional modalities: imaging, optical stimulation and electrical recording. The CMOS image sensor was fabricated on 0.35 μm standard CMOS process with built-in control circuits for an on-chip blue light-emitting diode (LED) array. The effective imaging area was 2.0 × 1.8 mm². The pixel array was composed of 7.5 × 7.5 μm² 3-transistor active pixel sensors (APSs). The LED array had 10 × 8 micro-LEDs measuring 192 × 225 μm². We integrated the device with a commercial multichannel recording system to make electrical recordings.Entities:
Mesh:
Year: 2012 PMID: 22418489 DOI: 10.1364/OE.20.006097
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894