| Literature DB >> 22412331 |
Guillermo Zatorre1, Nicolás Medrano, María Teresa Sanz, Concepción Aldea, Belén Calvo, Santiago Celma.
Abstract
This work presents two current-mode integrated circuits designed for sensor signal preprocessing in embedded systems. The proposed circuits have been designed to provide good signal transfer and fulfill their function, while minimizing the load effects due to building complex conditioning architectures. The processing architecture based on the proposed building blocks can be reconfigured through digital programmability. Thus, sensor useful range can be expanded, changes in the sensor operation can be compensated for and furthermore, undesirable effects such as device mismatching and undesired physical magnitudes sensor sensibilities are reduced. The circuits were integrated using a 0.35 μm standard CMOS process. Experimental measurements, load effects and a study of two different tuning strategies are presented. From these results, system performance is tested in an application which entails extending the linear range of a magneto-resistive sensor. Circuit area, average power consumption and programmability features allow these circuits to be included in embedded sensing systems as a part of the analogue conditioning components.Entities:
Keywords: electronics for sensor conditioning; neural networks circuits; sensor readout circuits
Year: 2009 PMID: 22412331 PMCID: PMC3297160 DOI: 10.3390/s90503652
Source DB: PubMed Journal: Sensors (Basel) ISSN: 1424-8220 Impact factor: 3.576
Figure 1.Proposed adaptive processing unit.
Figure 2.Four-quadrant analog-digital current multiplier.
Figure 3.Sign circuit.
Sign circuit Characteristics.
| 13×10-3 mm2 | |||||||
| 13 Ω | |||||||
| 9 Ω | |||||||
| 31 kΩ | |||||||
| 149 kΩ | |||||||
| 541 μW | |||||||
| 457□μW | |||||||
| ±1.65 V | |||||||
| ±1.65 V | |||||||
| 30 μA | |||||||
| 168/4 | 40/1 | 64/4 | 168/4 | 40/1 | 88/4 | ||
Figure 4.M-2M current ladder.
Current ladder characteristics.
| 165.4 μm2 | |
| 325 Ω | |
| 410 Ω | |
| 615 Ω | |
| 79 pW | |
| 1.65 V | |
| ±1.65 V | |
| 10/0.35 | |
Figure 5.Non-linear (logistic) output circuit.
Characteristics of the non-linear output circuit.
| 4.73×10-3 mm2 | ||||||||
| 13 Ω | ||||||||
| 9 Ω | ||||||||
| 12 kΩ | ||||||||
| 15 kΩ | ||||||||
| 2.0 mW | ||||||||
| 1.8 mW | ||||||||
| 168/4 | 1680/4 | 8.5/1 | 17/1 | 6/1 | 64/4 | 3.1/1 | 3/1 | |
| 168/4 | 8.5/1 | 1/1 | 64/4 | 640/4 | 3.4/1 | 6.8/1 | 3/1 | |
Figure 6.Chip microphotograph.
Figure 7.(Top) Current ladder output. (Bottom) Output error (compared to the expected output).
Figure 8.(Top) Logistic circuit operation compared to an ideal behaviour. (middle) Slope difference. (Bottom) Output error.
Figure 9.Current lost due to connecting several multipliers to a single logistic circuit (%).
Figure 10.Sensor processing architecture.
Figure 11.(a) RMSE vs. number of bits perturbed (multiple parameter algorithm). (b) RMSE vs. number of bits perturbed (single parameter algorithm).