Literature DB >> 22407902

Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

Qi Liu1, Jun Sun, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun, Ming Liu.   

Abstract

Evolution of growth/dissolution conductive filaments (CFs) in oxide-electrolyte-based resistive switching memories are studied by in situ transmission electron microscopy. Contrary to what is commonly believed, CFs are found to start growing from the anode (Ag or Cu) rather than having to reach the cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside the oxide-electrolyte is proposed.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Year:  2012        PMID： 22407902     DOI： 10.1002/adma.201104104

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  46 in total

1.  Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells.

Authors:  Nicolas Onofrio; David Guzman; Alejandro Strachan
Journal:  Nat Mater       Date:  2015-03-02       Impact factor: 43.841

2.  Memristive devices for computing.

Authors:  J Joshua Yang; Dmitri B Strukov; Duncan R Stewart
Journal:  Nat Nanotechnol       Date:  2013-01       Impact factor: 39.213

3.  Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing.

Authors:  Zhongrui Wang; Saumil Joshi; Sergey E Savel'ev; Hao Jiang; Rivu Midya; Peng Lin; Miao Hu; Ning Ge; John Paul Strachan; Zhiyong Li; Qing Wu; Mark Barnell; Geng-Lin Li; Huolin L Xin; R Stanley Williams; Qiangfei Xia; J Joshua Yang
Journal:  Nat Mater       Date:  2016-09-26       Impact factor: 43.841

4.  Cluster-type analogue memristor by engineering redox dynamics for high-performance neuromorphic computing.

Authors:  Jaehyun Kang; Taeyoon Kim; Suman Hu; Jaewook Kim; Joon Young Kwak; Jongkil Park; Jong Keuk Park; Inho Kim; Suyoun Lee; Sangbum Kim; YeonJoo Jeong
Journal:  Nat Commun       Date:  2022-07-12       Impact factor: 17.694

5.  Resistive switching memory characteristics of Ge/GeOx nanowires and evidence of oxygen ion migration.

Authors:  Amit Prakash; Siddheswar Maikap; Sheikh Ziaur Rahaman; Sandip Majumdar; Santanu Manna; Samit K Ray
Journal:  Nanoscale Res Lett       Date:  2013-05-08       Impact factor: 4.703

6.  Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM.

Authors:  Shibing Long; Luca Perniola; Carlo Cagli; Julien Buckley; Xiaojuan Lian; Enrique Miranda; Feng Pan; Ming Liu; Jordi Suñé
Journal:  Sci Rep       Date:  2013-10-14       Impact factor: 4.379

7.  The chemically driven phase transformation in a memristive abacus capable of calculating decimal fractions.

Authors:  Hanni Xu; Yidong Xia; Kuibo Yin; Jianxin Lu; Qiaonan Yin; Jiang Yin; Litao Sun; Zhiguo Liu
Journal:  Sci Rep       Date:  2013-02-06       Impact factor: 4.379

8.  Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte.

Authors:  Sheikh Ziaur Rahaman; Siddheswar Maikap; Atanu Das; Amit Prakash; Ya Hsuan Wu; Chao-Sung Lai; Ta-Chang Tien; Wei-Su Chen; Heng-Yuan Lee; Frederick T Chen; Ming-Jinn Tsai; Liann-Be Chang
Journal:  Nanoscale Res Lett       Date:  2012-11-06       Impact factor: 4.703

9.  Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition.

Authors:  Peng Zhou; Li Ye; Qing Qing Sun; Peng Fei Wang; An Quan Jiang; Shi Jin Ding; David Wei Zhang
Journal:  Nanoscale Res Lett       Date:  2013-02-19       Impact factor: 4.703

10.  Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation.

Authors:  Chung-Nan Peng; Chun-Wen Wang; Tsung-Cheng Chan; Wen-Yuan Chang; Yi-Chung Wang; Hung-Wei Tsai; Wen-Wei Wu; Lih-Juann Chen; Yu-Lun Chueh
Journal:  Nanoscale Res Lett       Date:  2012-10-08       Impact factor: 4.703
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