| Literature DB >> 22362565 |
Massimiliano Cavallini1, Zahra Hemmatian, Alberto Riminucci, Mirko Prezioso, Vittorio Morandi, Mauro Murgia.
Abstract
A nanomemristor based on SiO(2) is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes.Entities:
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Year: 2012 PMID: 22362565 DOI: 10.1002/adma.201104301
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849