| Literature DB >> 22355737 |
Liaoyu Wang1, Dunhui Wang, Qingqi Cao, Yuanxia Zheng, Haicheng Xuan, Jinlong Gao, Youwei Du.
Abstract
In the single-phase multiferroics, the coupling between electric polarization (P) and magnetization (M) would enable the magnetoelectric (ME) effect, namely M induced and modulated by E, and conversely P by H. Especially, the manipulation of magnetization by an electric field at room-temperature is of great importance in technological applications, such as new information storage technology, four-state logic device, magnetoelectric sensors, low-power magnetoelectric device and so on. Furthermore, it can reduce power consumption and realize device miniaturization, which is very useful for the practical applications. In an M-type hexaferrite SrCo(2)Ti(2)Fe(8)O(19), large magnetization and electric polarization were observed simultaneously at room-temperature. Moreover, large effect of electric field-controlled magnetization was observed even without magnetic bias field. These results illuminate a promising potential to apply in magnetoelectric devices at room temperature and imply plentiful physics behind them.Entities:
Year: 2012 PMID: 22355737 PMCID: PMC3259679 DOI: 10.1038/srep00223
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1The room-temperature powder X-ray diffraction pattern and Rietveld refinement for polycrystalline SCTFO.
The fractional coordinates and occupation factors for polycrystalline SCTFO.
| Atom | Site | x | y | z | SOF |
|---|---|---|---|---|---|
| 2d | 0.3333 | 0.6667 | 0.25 | 1.0 | |
| 2a | 0.0 | 0.0 | 0.0 | 1.0 | |
| 2b | 0.0 | 0.0 | 0.6231(16) | 0.5 | |
| 4f | 0.6667 | 0.3333 | 0.02714(28) | 1.0 | |
| 4f | 0.6667 | 0.3333 | 0.2310(8) | 1.0 | |
| 12k | 0.1845(4) | 0.3691(8) | 0.11117(12) | 0.66667 | |
| 12k | 0.0973(5) | 0.1946(11) | 0.11266(25) | 0.33333 | |
| 4e | 0.0 | 0.0 | 0.1225(17) | 1.0 | |
| 4f | 0.3333 | 0.6667 | 0.0935(6) | 1.0 | |
| 6h | 0.8707(6) | 0.7413(13) | 0.25 | 1.0 | |
| 12k | 0.8462(9) | 0.6924(18) | 0.03472(20) | 1.0 | |
| 12k | 0.5387(6) | 1.0774(13) | 0.11144(24) | 1.0 |
Figure 2(a) The magnetic hysteresis loop for SCTFO at 300 K; the inset of (a) shows the enlarged magnetic hysteresis loop; (b) The variation of M for the sample as a function of T.
Figure 3(a) The temperature dependence of P (red) and M (black) for SCTFO. (b) The magnetic initial curve (black) and H dependence of P (red) at 300 K.
Figure 4(a) The room temperature magnetic hysteresis loop under different E (zero and 22 kV/cm); (b) The change rate of M under various E with magnetic bias field ( H = 460 Oe) at room temperature: E⊥H (Red); E∥H (Black).
Figure 5(a) The change of M as a function of E at room temperature without magnetic bias field; (b) The time dependence of M under a square wave electric field.
Figure 6Topography (a) and MFM images of SCTFO at a selected area under different poling voltage: (b) V = 0V; (c) V = 6V; (d) V = 10V.