Sub-100 nm structuring of indium-tin-oxide thin films by sub-15 femtosecond pulsed near-infrared laser light.

In magnetron sputtered indium-tin-oxide thin films of varying oxygen content, nanostructures were formed using tightly focused high-repetition rate near-infrared sub-15 femtosecond pulsed laser light. At radiant exposure well beyond the ablation threshold, cuts of 280-350 nm in width were generated. Illumination close to the ablation threshold resulted in periodic cuts of typically 20 nm in width at periodicities between 50 nm and 180 nm, as well as single sub-20 nm cuts. Subthreshold exposure, in combination with hydrochloric acid etching, yielded nanowires of 50 nm minimum lateral dimensions.