| Literature DB >> 22303916 |
Sungwoo Kim1, Taehoon Kim, Meejae Kang, Seong Kwon Kwak, Tae Wook Yoo, Lee Soon Park, Ilseung Yang, Sunjin Hwang, Jung Eun Lee, Seong Keun Kim, Sang-Wook Kim.
Abstract
Highly stable and luminescent InP/GaP/ZnS QDs with a maximum quantum yield of 85% were synthesized by in situ method. The GaP shell rendered passivation of the surface and removed the traps. TCSPC data showed an evidence for the GaP shell. InP/GaP/ZnS QDs show better stability than InP/ZnS. We studied the optical properties of white QD-LEDs corresponding to various QD concentrations. Among various concentrations, the white QD-LEDs with 0.5 mL of QDs exhibited a luminous efficiency of 54.71 lm/W, Ra of 80.56, and CCT of 7864 K.Year: 2012 PMID: 22303916 DOI: 10.1021/ja210211z
Source DB: PubMed Journal: J Am Chem Soc ISSN: 0002-7863 Impact factor: 15.419