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Literature DB >> 22278910

Enhancement of ferroelectric polarization stability by interface engineering.

H Lu¹, X Liu, J D Burton, C-W Bark, Y Wang, Y Zhang, D J Kim, A Stamm, P Lukashev, D A Felker, C M Folkman, P Gao, M S Rzchowski, X Q Pan, C-B Eom, E Y Tsymbal, A Gruverman.

Abstract

By using theoretical predictions based on first-principle calculations, we explore an interface engineering approach to stabilize polarization states in ferroelectric heterostructures with a thickness of just several nanometers.

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Year: 2012 PMID： 22278910 DOI： 10.1002/adma.201104398

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

11 in total

1. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.

Authors: Zheng Wen; Chen Li; Di Wu; Aidong Li; Naiben Ming
Journal: Nat Mater Date: 2013-05-19 Impact factor: 43.841

2. Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode.

Authors: Catherine Dubourdieu; John Bruley; Thomas M Arruda; Agham Posadas; Jean Jordan-Sweet; Martin M Frank; Eduard Cartier; David J Frank; Sergei V Kalinin; Alexander A Demkov; Vijay Narayanan
Journal: Nat Nanotechnol Date: 2013-09-29 Impact factor: 39.213

3. Atomic Resolution Interfacial Structure of Lead-free Ferroelectric K_0.5Na_0.5NbO₃ Thin films Deposited on SrTiO₃.

Authors: Chao Li; Lingyan Wang; Zhao Wang; Yaodong Yang; Wei Ren; Guang Yang
Journal: Sci Rep Date: 2016-11-25 Impact factor: 4.379

4. Magnetocapacitance in La_0.7Sr_0.3MnO₃/Pb(Zr_0.2Ti_0.8)O₃/La_0.7Sr_0.3MnO₃ multiferroic heterostructures.

Authors: Luminita M Hrib; Lucian Pintilie; Marin Alexe
Journal: Sci Rep Date: 2017-07-26 Impact factor: 4.379

5. Discovery of a magnetic conductive interface in PbZr_0.2Ti_0.8O₃ /SrTiO₃ heterostructures.

Authors: Yi Zhang; Lin Xie; Jeongwoo Kim; Alex Stern; Hui Wang; Kui Zhang; Xingxu Yan; Linze Li; Henry Liu; Gejian Zhao; Hang Chi; Chaitanya Gadre; Qiyin Lin; Yichun Zhou; Ctirad Uher; Tingyong Chen; Ying-Hao Chu; Jing Xia; Ruqian Wu; Xiaoqing Pan
Journal: Nat Commun Date: 2018-02-15 Impact factor: 14.919

6. Colossal flexoresistance in dielectrics.

Authors: Sung Min Park; Bo Wang; Tula Paudel; Se Young Park; Saikat Das; Jeong Rae Kim; Eun Kyo Ko; Han Gyeol Lee; Nahee Park; Lingling Tao; Dongseok Suh; Evgeny Y Tsymbal; Long-Qing Chen; Tae Won Noh; Daesu Lee
Journal: Nat Commun Date: 2020-05-22 Impact factor: 14.919

Enhancement of ferroelectric polarization stability by interface engineering.

1. Ferroelectric-field-effect-enhanced electroresistance in metal/ferroelectric/semiconductor tunnel junctions.

2. Switching of ferroelectric polarization in epitaxial BaTiO₃ films on silicon without a conducting bottom electrode.

3. Atomic Resolution Interfacial Structure of Lead-free Ferroelectric K_0.5Na_0.5NbO₃ Thin films Deposited on SrTiO₃.

4. Magnetocapacitance in La_0.7Sr_0.3MnO₃/Pb(Zr_0.2Ti_0.8)O₃/La_0.7Sr_0.3MnO₃ multiferroic heterostructures.

5. Discovery of a magnetic conductive interface in PbZr_0.2Ti_0.8O₃ /SrTiO₃ heterostructures.

6. Colossal flexoresistance in dielectrics.

Review 7. Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures.

8. Non-volatile optical switch of resistance in photoferroelectric tunnel junctions.

9. First-principles study of interface doping in ferroelectric junctions.

10. Superior polarization retention through engineered domain wall pinning.