Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals.

Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors. This journal is © The Royal Society of Chemistry 2012