| Literature DB >> 22275771 |
A M Gilbertson, A Kormányos, P D Buckle, M Fearn, T Ashley, C J Lambert, S A Solin, L F Cohen.
Abstract
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10(6) A/cm(2). This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.Year: 2011 PMID： 22275771 PMCID： PMC3261050 DOI： 10.1063/1.3668107
Source DB: PubMed Journal: Appl Phys Lett ISSN： 0003-6951 Impact factor: 3.791