| Literature DB >> 22274212 |
A Säynätjoki1, L Karvonen, T Alasaarela, X Tu, T Y Liow, M Hiltunen, A Tervonen, G Q Lo, S Honkanen.
Abstract
We demonstrate low-loss silicon slot waveguides patterned with 248 nm deep-UV lithography and filled with atomic layer deposited aluminum oxide. Propagation losses less than 5 dB/cm are achieved with the waveguides. The devices are fabricated using low-temperature CMOS compatible processes. We also demonstrate simple, compact and efficient strip-to-slot waveguide couplers. With a coupler as short as 10 µm, coupling loss is less than 0.15 dB. The low-index and low-nonlinearity filling material allows nonlinearities nearly two orders of magnitude smaller than in silicon waveguides. Therefore, these waveguides are a good candidate for linear photonic devices on the silicon platform, and for distortion-free signal transmission channels between different parts of a silicon all-optical chip. The low-nonlinearity slot waveguides and robust couplers also facilitate a 50-fold local change of the waveguide nonlinearity within the chip by a simple mask design.Entities:
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Year: 2011 PMID: 22274212 DOI: 10.1364/OE.19.026275
Source DB: PubMed Journal: Opt Express ISSN: 1094-4087 Impact factor: 3.894