| Literature DB >> 22268954 |
G P Lansbergen1, Y Ono, A Fujiwara.
Abstract
We report on single electron pumping via a tunable number of individual donors. We use a device that essentially consists of a silicon nanowire with local arsenic implantation between a set of fine gates. A temperature-dependent characterization of the pumped current allows us to extract the ionization energy of a single arsenic donor. We observe the ionization energy to be tunable by the gate electric field over a large range of energies.Entities:
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Year: 2012 PMID: 22268954 DOI: 10.1021/nl203709d
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189