| Literature DB >> 22243175 |
Yang Liu1, J Shabani, D Kamburov, M Shayegan, L N Pfeiffer, K W West, K W Baldwin.
Abstract
We report the evolution of the fractional quantum Hall state (FQHS) at a total Landau level (LL) filling factor of ν=7/2 in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt angle, or symmetry of the charge distribution. At intermediate tilt angles, for example, we observe a strengthening of the ν=7/2 FQHS. Moreover, in a well with asymmetric change distribution, there is a developing FQHS when the LL filling factor of the symmetric subband ν(S) equals 5/2 while the antisymmetric subband has a filling factor of 1<ν(A)<2.Year: 2011 PMID: 22243175 DOI: 10.1103/PhysRevLett.107.266802
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161