Literature DB >> 22161977

Single-gate bandgap opening of bilayer graphene by dual molecular doping.

Jaesung Park1, Sae Byeok Jo, Young-Jun Yu, Youngsoo Kim, Jae Won Yang, Wi Hyoung Lee, Hyun Ho Kim, Byung Hee Hong, Philip Kim, Kilwon Cho, Kwang S Kim.   

Abstract

Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2 -functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure.
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  bandgap opening; bilayer graphene; field-effect transistors; molecular doping; self-assembled monolayers

Mesh：

Substances：

Year:  2011        PMID： 22161977     DOI： 10.1002/adma.201103411

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  13 in total

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8.  Tunable and sizable band gap in silicene by surface adsorption.

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10.  Difference in gating and doping effects on the band gap in bilayer graphene.

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