Literature DB >> 22136412

Chloride-based CVD growth of silicon carbide for electronic applications.

Henrik Pedersen1, Stefano Leone, Olof Kordina, Anne Henry, Shin-ichi Nishizawa, Yaroslav Koshka, Erik Janzén.   

Abstract

Entities:  

Year:  2011        PMID： 22136412     DOI： 10.1021/cr200257z

Source DB:  PubMed          Journal:  Chem Rev        ISSN： 0009-2665            Impact factor:   60.622


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  2 in total

1.  Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H2 Gaseous System.

Authors:  Botao Song; Bing Gao; Pengfei Han; Yue Yu
Journal:  Materials (Basel)       Date:  2022-05-25       Impact factor: 3.748

2.  Numerical Simulation of Gas Phase Reaction for Epitaxial Chemical Vapor Deposition of Silicon Carbide by Methyltrichlorosilane in Horizontal Hot-Wall Reactor.

Authors:  Botao Song; Bing Gao; Pengfei Han; Yue Yu; Xia Tang
Journal:  Materials (Basel)       Date:  2021-12-08       Impact factor: 3.623
  2 in total

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