Enhanced electroluminescence of a-plane InGaN light emitting diodes grown on oxide-patterned r-plane sapphire substrates.

We report on the new fabrication method of a-plane InGaN light emitting diodes (LEDs) using the epitaxy on patterned insulator on sapphire substrate (EPISS). Cathodoluminescence spectrum of the fully coalesced a-plane GaN template showed that band edge emission intensity of the wing region was four times higher than that of the window region. Threading dislocations and basal stacking faults densities in wing region were ~1×10⁷ cm⁻² and ~5☓10⁴ cm⁻¹, respectively. Blue-emitting (443.4 nm) a-plane InGaN LED employing EPISS showed the optical power of 3.1 mW and the EL FWHM of 25.2 nm at the injection current of 20 mA.